Shin-ya Nunoue: search on Z-Library

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1

Effect of metal type on the contacts to n-type and p-type GaN

Rennie, John, Onomura, Masaaki, Nunoue, Shin-ya, Hatakoshi, Gen-ichi, Sugawara, Hideto, Ishikawa, Masayuki

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 94 KB

english, 1998

2

Mass spectrometric study of the activities of the Fe-Ge system at 1550 °C

Shin-Ya Nunoue, Eiichi Kato

Journal:

Metallurgical and Materials Transactions B

Year:

1988

Language:

english

File:

PDF, 279 KB

english, 1988

3

Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates

Koichi Tachibana, Hajime Nago, Shin-ya Nunoue

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 160 KB

english, 2008

4

Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon

Nishibe, Tohru, Nunoue, Shin-ya

Journal:

Japanese Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

5

Nitride Laser Diodes With InGaN Based Mqw Structures

Sugiura, Lisa, Nishio, Jobji, Onomura, Masaaki, Nunoue, Shin-Ya, Itaya, Kazuhiko, Ishikawa, Masayuki

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 1.81 MB

english, 1997

6

Thermal Analysis for GaN Laser Diodes

Hatakoshi, Gen-ichi, Onomura, Masaaki, Yamamoto, Masahiro, Nunoue, Shin-ya, Itaya, Kazuhiko, Ishikawa, Masayuki

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 247 KB

english, 1999

7

Mass spectrometric study of the partial phase diagram of the Fe-Ge system above 1050°C

Shin-Ya Nunoue, Eiichi Kato

Journal:

Metallurgical and Materials Transactions A

Year:

1989

Language:

english

File:

PDF, 201 KB

english, 1989

8

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [1 1 - 00] direction

Tachibana, Koichi, Morkoc, Hadis, Litton, Cole W., Nago, Hajime, Nunoue, Shin-ya

Year:

2007

Language:

english

File:

PDF, 400 KB

english, 2007

9

Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells

Toshiki Hikosaka, Tomonari Shioda, Yoshiyuki Harada, Koichi Tachibana, Naoharu Sugiyama, Shin-ya Nunoue

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

10

Mass Spectrometric Study of the Phase Boundaries of the CdS-CdTe System

Nunoue, Shin-Ya

Journal:

Journal of The Electrochemical Society

Year:

1990

Language:

english

File:

PDF, 429 KB

english, 1990

11

Feasibility study of low-power multiquantum-well vertical transmission optical amplifiers for optical interconnection

Nobuo Suzuki, Makoto OHashi, Shin-ya Nunoue, Masaru Nakamura

Journal:

Year:

1996

Language:

english

File:

PDF, 336 KB

english, 1996

12

Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes

Nunoue, Shin-ya, Yamamoto, Masahiro, Suzuki, Mariko, Nozaki, Chiharu, Nishio, Joji, Sugiura, Lisa, Onomura, Masaaki, Itaya, Kazuhiko, Ishikawa, Masayuki

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 856 KB

1998

13

Spontaneous Emission Enhancement in Pillar-Type Microcavities

Tezuka, Tsutomu, Nunoue, Shin-ya, Yoshida, Haruhiko, Noda, Takao

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 754 KB

1993

14

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Itaya, Kazuhiko, Onomura, Masaaki, Nishio, Johji, Sugiura, Lisa, Saito, Shinji, Suzuki, Mariko, Rennie, John, Nunoue, Shin-ya, Yamamoto, Masahiro, Fujimoto, Hidetoshi, Kokubun, Yoshihiro, Ohba, Yasuo,

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 592 KB

1996

15

The analysis of contact resistivity between a p-type GaN layer and electrode in InGaN MQW laser diodes

Masaaki Onomura, Shinji Saito, Lisa Sugiura, Mikio Nakasuji, Katsunobu Sasanuma, Johji Nishio, John Rennie, Shin-ya Nunoue, Kazuhiko Itaya

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

16

Extremely smooth surface morphology of GaN-based layers on misoriented GaN substrates for high-power blue-violet lasers

Koichi Tachibana, Hajime Nago, Shin-ya Nunoue

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

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